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Preliminary Technical Information
Trench T2 TM
Power MOSFET
IXTA300N04T2-7
V DSS
I D25
R DS(on)
= 40V
= 300A
≤ 2.5m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (7-lead)
Symbol
V DSS
V DGR
V GSM
I D25
I LRMS
I DM
I A
E AS
P D
T J
T JM
T stg
T L
T sold
Weight
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Maximum Ratings
40
40
± 20
300
160
900
100
600
480
-55 ... +175
175
-55 ... +175
300
260
3
V
V
V
A
A
A
A
mJ
W
° C
° C
° C
° C
° C
g
1
7
(TAB)
Pins: 1 - Gate
2, 3 - Source
5,6,7 - Source
TAB (8) - Drain
Features
International standard package
175 ° C Operating Temperature
Avalanche rated
High current handling capability
Low R DS(on)
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 50A, Notes 1, 2
40
2.0
V
4.0 V
± 200 nA
5 μ A
150 μ A
2.5 m Ω
Applications
? Synchronous Buck Converters
? High Current Switching Power
Supplies
? Battery Powered Electric Motors
? Resonant-mode power supplies
? Electronics Ballast Application
? Class D Audio Amplifiers
? 2008 IXYS CORPORATION, All rights reserved
DS100072(11/08)
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